the spp2095 is the p-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application, such as dc/dc converter and desktop computer power management. the package is universally preferred for commercial industrial surface mount applications z power management in desktop computer z dc/dc converter z lcd display inverter features pin configuration ( to-252-2l ) part marking ? -20v/-6.0a,r ds(on) = 65m ? @v gs =-4.5v ? -20v/-3.6a,r ds(on) = 850m ? @v gs =-2.5v ? -20v/-2.0a,r ds(on) =105m ? @v gs =-1.8v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? to-252-2l package design spp2095 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPP2095T252RG to-252-2l spp2095 week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPP2095T252RG : tape reel ; pb ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss -20 v gate ?source voltage v gss 12 v t a =25 -12 continuous drain current(t j =150 ) t a =70 i d -8 a pulsed drain current i dm -20 a continuous source current(diode conduction) i s -12 a t a =25 40 power dissipation t a =70 p d 20 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 105 /w spp2095 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
spp2095 electrical characteristics (t a =25 unless oth erwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -20 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -0.32 -0.8 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds =-20v,v gs =0v -1 zero gate voltage drain current i dss v ds =-20v,v gs =0v t j =55 -5 ua v gs =-4.5v,i d =-6.0a 0.055 0.065 v gs =-2.5v,i d =-3.6a 0.072 0.085 drain-source on-resistance r ds(on) v gs =-1.8v,i d =-2.0a 0.092 0.105 ? forward transconductance gfs v ds =-5v,i d =-2.8a 6 s diode forward voltage v sd i s =-6a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g 4.8 8 gate-source charge q gs 1.0 gate-drain charge q gd v ds =-10v,v gs =-4.5v i d -8.0a 1.0 nc input capacitance c iss 485 output capacitance c oss 85 reverse transfer capacitance c rss v ds =-10v,v gs =0v f=1mhz 40 pf t d(on) 10 16 turn-on time t r 13 23 t d(off) 18 25 turn-off time t f v dd =-10v,r l =6 ? i d -1.0a,v gen =-4.5v r g =6 ? 15 20 ns smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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